Piezotechnology: Fundamentals of Piezoelectricity



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Material Properties

Notes
The following pages give a detailed look at piezo actuator theory and their operation. For basic knowledge read “Quick Facts”. For definition of units, dimensions and terms, see “Symbols and Units” and “Glossary”.

Since the piezo effect exhibited by natural materials such as quartz, tourmaline, Rochelle salt, etc. is very small, polycrystalline ferroelectric ceramic materials such as barium titanate and lead (plumbum) zirconate titanate (PZT) with improved properties have been developed.

PZT ceramics (piezoceramics) are available in many variations and are still the most widely used materials for actuator applications today.
Before polarization, PZT crystallites have symmetric cubic unit cells. At temperatures below the Curie temperature, the lattice structure becomes deformed and asymmetric. The unit cells exhibit spontaneous polarization (see Fig. 5), i.e. the individual PZT crystallites are piezoelectric.

Groups of unit cells with the same orientation are called Weiss domains. Because of the random distribution of the domain orientations in the ceramic material no macroscopic piezoelectric behavior is observable. Due to the ferroelectric nature of the material, it is possible to force permanent alignment of the different domains using a strong electric field. This process is called poling (see Fig. 6). Some PZT ceramics must be poled at an elevated temperature. The material now has a remnant polarization (which can be degraded by exceeding the mechanical, thermal and electrical limits of the material). The ceramic now exhibits piezoelectric properties and will change dimensions when an electric potential is applied.


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Drawings & Images:
 
Fig. 5. PZT unit cell: <br>1) Perovskite-type lead zirconate titanate (PZT) unit cell in the symmetric cubic state above the Curie temperature.<br>2) Tetragonally distorted unit cell below the Curie temperature.
Fig. 5. PZT unit cell:
1) Perovskite-type lead zirconate titanate (PZT) unit cell in the symmetric cubic state above the Curie temperature.
2) Tetragonally distorted unit cell below the Curie temperature.

>Fig. 6. Electric dipoles in domains; (1) unpoled ferroelectric ceramic, (2) during and (3) after poling (piezoelectric ceramic).
Fig. 6. Electric dipoles in domains; (1) unpoled ferroelectric ceramic, (2) during and (3) after poling (piezoelectric ceramic).


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Piezotechnology: Fundamentals of Piezomechanics


Displacement of Piezo Actuators (Stack & Contraction Type)

Commonly used stack actuators achieve a relative displacement of up to 0.2 %. Displacement of piezoceramic actuators is primarily a function of the applied electric field strength E, the length L of the actuator, the forces applied to it and the properties of the piezoelectric material used. The material properties can be described by the piezoelectric strain coefficients dij. These coefficients describe the relationship between the applied electric field and the mechanical strain produced.

The change in length, DL, of an unloaded single-layer piezo actuator can be estimated by the following equation:

(Equation 1)





Where:

S = strain (relative length change DL/L, dimensionless)
L0 = ceramic length [m]
E = electric field strength [V/m]
dij = piezoelectric coefficient of the material [m/V]

d33 describes the strain parallel to the polarization vector of the ceramics (thickness) and is used when calculating the displacement of stack actuators; d31 is the strain orthogonal to the polarization vector (width) and is used for calculating tube and strip actuators (see Fig. 9). d33 and d31 are sometimes referred to as “piezo gain”.

Notes
For the materials used in standard PI piezo actuators, d33 is on the order of 250 to 550 pm/V, d31 is on the order of -180 to -210 pm/V. The highest values are attainable with shear actuators in d15 mode. These figures only apply to the raw material at room temperature under small-signal conditions.

The maximum allowable field strength in piezo actuators is between 1 and 2 kV/mm in the polarization direction. In the reverse direction (semi-bipolar operation), at most 300 V/mm is allowable (see Fig. 10). The maximum voltage depends on the ceramic and insulation materials.

Exceeding the maximum voltage may cause dielectric breakdown and irreversible damage to the piezo actuator.

With the reverse field, negative expansion (contraction) occurs, giving an additional 20 % of the nominal displacement. If both the regular and reverse fields are used, a relative expansion (strain) up to 0.2 % is achievable with piezo stack actuators. This technique can reduce the average applied voltage without loss of displacement and thereby increase piezo lifetime.

Stacks can be built with aspect ratios up to 12:1 (length:diameter). This means that the maximum travel range of an actuator with 15 mm piezo diameter is limited to about 200 µm. Longer travel ranges can be achieved by mechanical amplification techniques (see “Lever Motion Amplifiers” ).

Note:
PI piezo actuators and stages are designed for high reliability in industrial applications. The travel, voltage and load ranges in the technical data tables can actually be used in practice. They have been collected over many years of experience in piezo actuator production and in numerous industrial applications.

In contrast to many other piezo suppliers, PI has its own piezo ceramic development and production facilities together with the necessary equipment and knowhow. The goal is always reliability and practical usefulness. Maximizing isolated parameters, such as expansion or stiffness, at the cost of piezo lifetime might be interesting to an experimenter, but has no place in practical application.

When selecting a suitable piezo actuator or stage, consider carefully the fact that “maximum travel” may not be the only critical design parameter.

Hysteresis (Open-Loop Piezo Operation)
Hysteresis is observable in open-loop operation; it can be reduced by charge control and virtually eliminated by closed-loop operation (see pp. see link ff.).

Open-loop piezo actuators exhibit hysteresis in their dielectric and electromagnetic large-signal behavior. Hysteresis is based on crystalline polarization effects and molecular effects within the piezoelectric material.
The amount of hysteresis increases with increasing voltage (field strength) applied to the actuator. The “gap” in the voltage/displacement curve (see Fig. 11) typically begins around 2 % (small-signal) and widens to a maximum of 10 % to 15 % under large-signal conditions. The highest values are attainable with shear actuators in d15 mode.

For example, if the drive voltage of a 50 µm piezo actuator is changed by 10 %, (equivalent to about 5 µm displacement) the position repeatability is still on the order of 1 % of full travel or better than 1 µm.

The smaller the move, the smaller the uncertainty. Hysteresis must not be confused with the backlash of conventional mechanics. Backlash is virtually independent of travel, so its relative importance increases for smaller moves.

For tasks where it is not the absolute position that counts, hysteresis is of secondary importance and open-loop actuators can be used, even if high resolution is required.

In closed-loop piezo actuator systems hysteresis is fully compensated. PI offers these systems for applications requiring absolute position information, as well as motion with high linearity, repeatability and accuracy in the nanometer and sub-nanometer range (see pp. see link ff.).

Example: Piezoelectrically driven fiber aligners and tracking systems derive the control signal from an optical power meter in the system. There, the goal is to maximize the optical signal level as quickly as possible, not to attain a predetermined position value. An open-loop piezo system is sufficient for such applications. Advantages like unlimited resolution, fast response, zero backlash and zero stick/slip effect are most welcome, even without position control.

Creep / Drift (Open-Loop Piezo Operation)
The same material properties responsible for hysteresis also cause creep or drift. Creep is a change in displacement with time without any accompanying change in the control voltage. If the operating voltage of a piezo actuator is changed, the remnant polarization (piezo gain) continues to change, manifesting itself in a slow change of position. The rate of creep decreases logarithmically with time (see Fig. 12). The following equation describes this effect:

(Equation 2)





Creep of PZT motion as a function of time.

Where:

t = time [s]
DL(t) = change in position as a function of time
DLt= 0.1 = displacement 0.1 seconds after the voltage change is complete [m].
g = creep factor, which is dependent on the properties of the actuator (on the order of 0.01 to 0.02, which is 1 % to 2 % per time decade).

In practice, maximum creep (after a few hours) can add up to a few percent of the commanded motion.

Aging
Aging refers to reduction in remnant polarization; it can be an issue for sensor or charge-generation applications (direct piezo effect). With actuator applications it is negligible, because repoling occurs every time a higher electric field is applied to the actuator material in the poling direction.

Note
For periodic motion, creep and hysteresis have only a minimal effect on repeatability.

Drawings & Images:
 
Fig. 9. Expansion and contraction of a piezoelectric disk in response to an applied voltage. Note that d<sub>3</sub><sub>1</sub>, which describes the lateral motion, <font face=symbol>D</font>D, is negative.
Fig. 9. Expansion and contraction of a piezoelectric disk in response to an applied voltage. Note that d31, which describes the lateral motion, DD, is negative.

Fig. 10. Typical response of a “soft PZT” actuator to a bipolar drive voltage. When a certain threshold voltage negative to the polarization direction is exceeded, reversal of polarization can occur.
Fig. 10. Typical response of a “soft PZT” actuator to a bipolar drive voltage. When a certain threshold voltage negative to the polarization direction is exceeded, reversal of polarization can occur.

Fig. 11. Hysteresis curves of an open-loop piezo actuator for various peak voltages. The hysteresis is related to the distance moved, not to the nominal travel range.
Fig. 11. Hysteresis curves of an open-loop piezo actuator for various peak voltages. The hysteresis is related to the distance moved, not to the nominal travel range.

Fig. 12. Creep of open-loop PZT motion after a 60 µm change in length as a function of time. Creep is on the order of 1 % of the last commanded motion per time decade.
Fig. 12. Creep of open-loop PZT motion after a 60 µm change in length as a function of time. Creep is on the order of 1 % of the last commanded motion per time decade.



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Actuators and Sensors


Piezotechnology: Metrology for Nanopositioning Systems

There are two basic techniques for determining the position of piezoelectric motion systems: Direct metrology and indirect metrology.

Indirect (Inferred) Metrology
Indirect metrology involves inferring the position of the platform by measuring position or deformation at the actuator or other component in the drive train. Motion inaccuracies which arise between the drive and the platform can not be accounted for.

Direct Metrology
With direct metrology, however, motion is measured at the point of interest; this can be done, for example, with an interferometer or capacitive sensor.
Direct metrology is more accurate and thus better suited to applications which need absolute position measurements. Direct metrology also eliminates phase shifts between the measuring point and the point of interest. This difference is apparent in higher-load, multi-axis dynamic applications.

Parallel and Serial Metrology
In multi-axis positioning sys-tems parallel and serial metrology must also be distinguished.

With parallel metrology, all sensors measure the position of the same moving platform against the same stationary reference. This means that all motion is inside the servo-loop, no matter which actuator caused it (see Active Trajectory Control). Parallel metrology and parallel kinematics can be easily integrated.

With serial metrology the reference plane of one or more sensors is moved by one or more actuators. Because the off-axis motion of any moving reference plane is never measured, it can not be compensated.
See also p. see link ff.



High-Resolution Sensors


Strain Gauge Sensors
SGS sensors are an implementation of inferred metrology and are typically chosen for cost-sensitive applications. An SGS sensor consists of a resistive film bonded to the piezo stack or a guidance element; the film resistance changes when strain occurs. Up to four strain gauges (the actual configuration varies with the actuator construction) form a Wheatstone bridge driven by a DC voltage (5 to 10 V). When the bridge resistance changes, the sensor electronics converts the resulting voltage change into a signal proportional to the displacement.

A special type of SGS is known as a piezoresistive sensor. It has good sensitivity, but mediocre linearity and temperature stability. See also p. see link ff.

Resolution: better than 1 nm (for short travel ranges, up to about 15 µm)

Bandwidth: to 5 kHz

Advantages

  • High Bandwidth
  • Vacuum Compatible
  • Highly Compact


    Other characteristics:
  • Low heat generation (0.01 to 0.05 W sensor excitation power)
  • Long-term position stability depends on adhesive quality
  • Indirect metrology


    Examples
    Most PI LVPZT and HVPZT actuators are available with strain gauge sensors for closed-loop control (see the “Piezo Actuators” section p. see link ff.).

    Note
    The sensor bandwidth for the sensors described here should not be confused with the bandwidth of the piezo mechanics servo-control loop, which is further limited by the electronic and mechanical properties of the system.

    Linear Variable Differential Transformers (LVDTs)
    LVDTs are well suited for direct metrology. A magnetic core, attached to the moving part, determines the amount of magnetic energy induced from the primary windings into the two differential secondary windings (Fig. 15). The carrier frequency is typically 10 kHz.

    Resolution: to 5 nm

    Bandwidth: to 1 kHz

    Repeatability: to 5 nm


    Advantages:

  • Good temperature stability
  • Very good long-term stability
  • Non-contactingK Controls the position of the moving part rather than the position of the piezo stack
  • Cost-effective



    Other characteristics:
  • Outgassing of insulation materials may limit applications in very high vacuum
  • Generates magnetic field


    Examples
    P-780, p. P-721.LLQ

    Capacitive Position Sensors

    Capacitive sensors are the metrology system of choice for the most demanding applications.

    Two-plate capacitive sensors consist of two RF-excited plates that are part of a capacitive bridge (Fig. 17). One plate is fixed, the other plate is connected to the object to be positioned (e.g. the platform of a stage). The distance between the plates is inversely proportional to the capacitance, from which the displacement is calculated. Short-range, two-plate sensors can achieve resolution on the order of picometers. See the “Capacitive Displacement Sensors” section pp. see link ff. for details.

    Resolution: Better than 0.1 nm possible

    Repeatability: Better than 0.1 nm possible

    Bandwidth: Up to 10 kHz

    Advantages:

  • Highest resolution of all commercially available sensors
  • Ideally suited for parallel metrology
  • Non-contacting
  • Excellent long-term stability
  • Excellent frequency response
  • No magnetic field
  • Excellent linearity



    Other characteristics:
  • Ideally suited for integration in flexure guidance systems, which maintain the necessary parallelism of the plates. Residual tip/tilt errors are greatly reduced by the ILS linearization system (see p. see link) developed by PI.

Examples
P-733 parallel kinematic nanopositioning system with parallel metrology.
PIHera Single Axis Nanopositioning Stage Family; additional examples in the “Nanopositioning & Scanning Systems” section.

Piezo Blog

Drawings & Images:
 
Fig. 13. Strain gauge sensors. Paper clip for size comparison.
Fig. 13. Strain gauge sensors. Paper clip for size comparison.

Fig. 14. LVDT sensor, coil and core. Paper clip for size comparison.
Fig. 14. LVDT sensor, coil and core. Paper clip for size comparison.

Fig. 16. Capacitive sensors can attain resolution 10,000 times better than calipers.
Fig. 16. Capacitive sensors can attain resolution 10,000 times better than calipers.

Fig. 15. Working principle of an LVDT sensor
Fig. 15. Working principle of an LVDT sensor

Fig. 17. Working principle of two-plate capacitive position sensors
Fig. 17. Working principle of two-plate capacitive position sensors


Related Information:
 
D-015 · D-050 · D-100
Sub-Nanometer-Resolution Capacitive Position Sensors
 
D-510
PISeca™ Single-Electrode Capacitive Sensors for Sub-Nanometer Precision Measurements
 
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